Abstract
InGaAlAs/InP double heterojunction bipolar transistors with continuously graded base–emitter and base–collector junctions were successively fabricated, and their DC characteristics measured. The devices exhibited a lower offset voltage (Voffset <20 mV), lower output conductance and higher collector–emitter breakdown voltage (BVCEO >13 V, BVCBO > 20V) than are typically achieved in single heterojunction InGaAlAs devices.
Full Text
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call