Multiple trapping of hydrogen in antimony-doped silicon.

Abstract

We have employed M\"ossbauer spectroscopy and low energy H implantation to study the Sb-H complexes in n-type Si. The different M\"ossbauer components were studied as a function of H dose, H-implantation temperature, and annealing temperature. To understand the observed data, it is necessary to introduce, in addition to the well-known SbH complex, an ${\mathrm{SbH}}_{\mathit{n}}$ complex (n\ensuremath{\ge}2), which provides experimental evidence for the existence of donor-multihydrogen complexes. We show that these complexes are in thermal equilibrium with a larger hydrogen reservoir (${\mathrm{H}}_{2}^{\mathrm{*}}$), which governs their thermal stability.