Multiple Transitions in Permalloy Half-Ring Wires with Finite-Size Effect.

Cheng-Yi Wu,Shiow-Kang Yen

doi:10.3390/ma13061384

Abstract

Six permalloy (Py) half-rings with finite-size from 120 nm to 360 nm were connected in series on five corners. The magnetization reversal processes were investigated by the measurement of anisotropic magnetoresistance (AMR). The number of switching jumps in the AMR loops, from zero to five, varied with the longitudinal applied field. These discrete jumps resulted from domain wall (DW) nucleating and depinning on the corners. The larger external field had a fewer number of jumps in the magnetoresistance (MR) curve. This reproducible and particular response of the domain wall device in the half-ring wires pattern might be one of the new promising magnetoelectronic devices.

Highlights

IntroductionModern electronic devices for information storage such as dynamic random access memory (DRAM) and logic processors such as metal-oxide-semiconductor field-effect transistor (MOSFET) are basically in the form of capacitors
Nowadays, the issue of energy consumption is crucial from every aspect
Magnetoelectronic or spin-dependent spintronic devices can offer a better solution compared with conventional semiconductor devices [1,2]

Summary

Introduction

Modern electronic devices for information storage such as dynamic random access memory (DRAM) and logic processors such as metal-oxide-semiconductor field-effect transistor (MOSFET) are basically in the form of capacitors. Magnetoelectronic or spin-dependent spintronic devices can offer a better solution compared with conventional semiconductor devices [1,2]. To utilize giant magnetoresistance (GMR) or tunneling magnetoresistance (TMR) effects for hard disk drives, read-head or magnetic random-access memory (MRAM) are already on the way to commercial application. These magnetoelectronic or spintronic devices are mainly used as storage media, and this would block developing spintronic devices. Several developments of logic operation by magnetic structures, such as AND gate, NOT gate, shift register, and domain wall magnetic diodes, have been reported [3,4,5,6,7]

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Discussion

Conclusion