Abstract
The multiple-state storage capability of phase change memory (PCM) isconfirmed by using stacked chalcogenide films as the storage medium.The current–voltage characteristics and the resistance–currentcharacteristics of the PCM clearly indicate that four states can bestored in this stacked film structure. Qualitative analysis indicatesthat the multiple-state storage capability of this stacked filmstructure is due to successive crystallizations in different Si–Sb–Telayers triggered by different amplitude currents.
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