Abstract
Filamentary conduction in resistive switching metal- insulator-metal devices is often modeled from the circuital viewpoint using diode-like structures with series resistances. We show in this letter which arrangement of diodes and resistances is compatible with experimental multilevel set and reset I-V characteristics in electroformed TiN/SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> /TiN structures. The proposed model is based on the solution of the generalized diode equation corresponding to N diodes arranged in parallel with a single series resistance. The model is simple yet accurate and it is able to capture the essential features exhibited by the I-V curves in the low and high bias regimes, revealing that a single equation can deal with both the low and high resistance states. An exact expression for the differential conductance suitable for small-signal analysis and circuit simulators is also provided.
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