Abstract
AbstractWe present temperature (20–300 K) dependent multi‐carrier measurements of electron species in N‐face indium nitride. N‐face InN samples were grown to different thicknesses (500–2000 nm) via plasma‐assisted molecular beam epitaxy on C‐face SiC substrates. Surface and bulk electron transport properties were extracted using a quantitative mobility spectrum analysis. Mobility of both bulk and surface electron species increase with film thickness. The temperature dependence of the mobility of both species differs to that of In‐polar samples studied previously, while the mobility of surface electrons is more than twice that of In‐polar samples with only a slight corresponding reduction in sheet concentration. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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