Abstract
We are here concerned with fabrication possibility of multiparametric gas sensor based on porous silicon. In order to use the porous silicon as a gas sensor, we made the DBR (distributed Bragg reflector) porous silicon onto silicon wafer and monitored the change of three parameters during exposure of DBR porous silicon to ethanol gas. The sensing parameters were the shift of reflectance peak, the PL (photoluminescence) intensity, and the electrical conductance. As a result, the spectra of reflectance and PL shifted toward longer wavelength. The electrical conductivity increases rapidly. After removing the gas, all sensing parameters return exactly to the initial value.
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