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Abstract
The combined capabilities of both a nonplanar design and nonconventional carrier injection mechanisms are subject to recent scientific investigations to overcome the limitations of silicon metal oxide semiconductor field effect transistors. In this Letter, we present a multimode field effect transistors device using silicon nanowires that feature an axial n-type/intrinsic doping junction. A heterostructural device design is achieved by employing a self-aligned nickel-silicide source contact. The polymorph operation of the dual-gate device enabling the configuration of one p- and two n-type transistor modes is demonstrated. Not only the type but also the carrier injection mode can be altered by appropriate biasing of the two gate terminals or by inverting the drain bias. With a combined band-to-band and Schottky tunneling mechanism, in p-type mode a subthreshold swing as low as 143 mV/dec and an ON/OFF ratio of up to 104 is found. As the device operates in forward bias, a nonconventional tunneling transistor is realized, enabling an effective suppression of ambipolarity. Depending on the drain bias, two different n-type modes are distinguishable. The carrier injection is dominated by thermionic emission in forward bias with a maximum ON/OFF ratio of up to 107 whereas in reverse bias a Schottky tunneling mechanism dominates the carrier transport.
Highlights
The continuous advance in information technology over the last decades is mainly attributed to the complementary metal oxide semiconductor (CMOS) technology and the excellent scalability of its key component: the metal oxide semiconductor field effect transistor (MOSFET)
The fundamental room-temperature limit of the subthreshold swing results in enhanced leakage currents, and second, short channel effects (SCEs), which further increase the leakage currents become more prominent for scaled devices
Tunneling FETs (TFETs) and impact ionization FETs (IIFETs) are steep slope switching devices as their dynamic performance is not limited by thermionic emission
Summary
Circumvented ambipolarity by introducing a SiGe nanowire heterostructure[13] and Knoll et al suggested asymmetric source and drain doping.[14]. The normally off p-type behavior of the device in mode A (Figure 3; green, circles) is a result of electrostatically modulated, combined band-to-band and Schottky barrier tunneling In this mode, the nanowire device is biased in forward direction, that is, a negative drain-to-source voltage is applied, and the M-gate is set to −4 V. The nanowire device is biased in forward direction, that is, a negative drain-to-source voltage is applied, and the M-gate is set to −4 V In this configuration, the barrier at the doping interface is thin so that band-to-band tunneling of electrons close to the n++/i junction is enabled if holes are available in the channel region. This material is available free of charge via the Internet at http:// pubs.acs.org
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