Abstract
HfxAl1-xOy films with graded Al depth profile were grown by atomic layer deposition.The graded HfxAl1-xOy based stacks exhibit multilevel resistive switching behavior.Resistive switching is described in terms of redistribution of the oxygen vacancies. In this work, HfxAl1-xOy films with graded Al depth profile are grown by atomic layer deposition (ALD). HfxAl1-xOy based Pt/HfxAl1-xO/TiN stacks exhibit multilevel resistive switching behavior as revealed by I-V measurements. The distribution of the charged oxygen vacancies across as grown graded HfxAl1-xOy layer on Pt underlayer is evident from the X-ray photoemission spectroscopy analysis. The resistance switching in the graded HfxAl1-xOy layer is described in terms of the redistribution of the charged oxygen vacancies following the external biasing of the opposite polarities.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
