Multi-Level Phase Change Memory Cells with SiN or Ta2O5 Barrier Layers

Abstract

This work compares the effects of SiN and Ta2O5 barrier layers in a multi-level phase change random access memory (PCRAM) cell. The PCRAM cell comprises a phase change material stack between a top and a bottom electrode. The phase change material stack comprises a nitrogen-doped Ge2Sb2Te5 (NGST) layer on top of a thin barrier layer on an undoped GST layer. The thermal conductivity and electrical resistivity of the barrier layer affect multi-level switching performance in terms of endurance as well as power consumption. Extensive electrical characterization was performed on these PCRAM multi-level devices. Thermal analysis was also performed to investigate the thermal efficiency of each barrier layer. It was observed that for a constant barrier layer thickness of 1.5 nm, the endurance of the multi-level device with the SiN barrier layer was better than that with the Ta2O5 barrier layer; however, the multi-level device with the Ta2O5 barrier layer had a lower power consumption than that with the SiN barrier layer.