Abstract
Resistive switching memory has been studied actively for next-generation computing. Several binary oxides, such as HfO2 and Ta2O5, are widely adapted as resistive switching layers; however, there are several limitations to obtaining an energy- and area-efficient operation with sufficient reliability. Rare-earth oxide materials exhibit interesting resistive switching properties because of their reactivities with active anion species. In this study, atomic-layer-deposited GdOx films were investigated as an active switching layer for resistive switching memory. Post-deposition annealing of as-grown GdOx films enhanced the tunability of the resistance states, which can be useful for the multilevel operation of nonvolatile memory and neuromorphic computing applications. The effects of the crystallization and hygroscopic nature of the GdOx film are investigated for elucidating the change in the resistive switching characteristics and its underlying mechanism.
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