Abstract
The dielectric properties and tunability of multilayer thin films with compositional PbZr0.52Ti0.48O3/Bi1.5Zn1.0Nb1.5O7 (PZT/BZN) layers (PPBLs) fabricated by pulsed laser deposition on Pt/TiO2/SiO2/Si substrate have been investigated. Dielectric measurements indicate that the PZT/BZN bilayer thin films exhibit medium dielectric constant of about 490, low loss tangent of 0.017, and superior tunable dielectric properties (tunability = 49.7% at 500 kV/cm) at a PZT/BZN thickness ratio of 3, while the largest figure of merit is obtained as 51.8. The thickness effect is discussed with a series connection model of bilayer capacitors, and the calculated dielectric constant and loss tangent are obtained. Furthermore, five kinds of thin–film samples comprising single bilayers, two, three, four and five PPBLs were also elaborated with the final same thickness. The four PPBLs show the largest dielectric constant of ~538 and tunability of 53.3% at a maximum applied bias field of 500 kV/cm and the lowest loss tangent of ~0.015, while the largest figure of merit is 65.6. The results indicate that four PPBLs are excellent candidates for applications of tunable devices.
Highlights
The dielectric properties and tunability of multilayer thin films with compositional PbZr0.52Ti0.48O3/ Bi1.5Zn1.0Nb1.5O7 (PZT/BZN) layers (PPBLs) fabricated by pulsed laser deposition on Pt/TiO2/SiO2/ Si substrate have been investigated
We suggested that the heterolayered structure of PZT thin films with a BZN layer would decrease the overall dielectric loss and improve the figure of merit (FOM), which is very important for practical application
The intensities of the PZT thin film phase peaks decrease as the thickness ratio x increases
Summary
The dielectric properties and tunability of multilayer thin films with compositional PbZr0.52Ti0.48O3/ Bi1.5Zn1.0Nb1.5O7 (PZT/BZN) layers (PPBLs) fabricated by pulsed laser deposition on Pt/TiO2/SiO2/ Si substrate have been investigated. Dielectric measurements indicate that the PZT/BZN bilayer thin films exhibit medium dielectric constant of about 490, low loss tangent of 0.017, and superior tunable dielectric properties (tunability = 49.7% at 500 kV/cm) at a PZT/BZN thickness ratio of 3, while the largest figure of merit is obtained as 51.8. We suggested that the heterolayered structure of PZT thin films with a BZN layer would decrease the overall dielectric loss and improve the FOM, which is very important for practical application. Our results show that the four PPBLs with a PZT/BZN thickness ratio of 3 demonstrate a lower loss tangent while retaining relatively high tunability, making them a promising candidate for integrated device applications
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