Abstract

Sensing devices are crucial components in mobile devices for human health care and in industrial applications. Because of the recent increase in demand for sensing devices, manufacturers have shortened production cycles by using thinner silicon substrates or by integrating different integrated circuits onto wafers. In general, dicing quality (i.e., chipping, crack, residual, and groove widths) is vital for determining yield rate. Conventional blade dicing is a common method used in the wafer-dicing process that pollutes the cutting surface with debris generated from the dicing process and causes the cutting edge to crack easily. Laser dicing methods are strongly recommended because they have high processing accuracy and do not produce chemical pollution.In this study, a laser power versus dicing speed models were developed to determine whether laser direct scribing or laser milling is more suitable for wafer dicing. The dicing depth of the two methods were examined. An 8-in. silicon wafer with a 0.75-mm-thick multilayer stack material was diced using a nanosecond pulsed ultraviolet laser system with a 355-nm laser wavelength. The wafer was subsequently broken by using a die separation platform. The processing parameters included a laser power of 5.1, 8.05, 8.95, and 9.58 W at a dicing speed of 50, 100, 300, 500, and 700 mm/s, all of which were examined alongside the contour at the dicing edge to evaluate the dicing quality. Moreover, field-emission scanning electron microscopy and three-dimensional confocal microscopy were used to analyze the properties of the diced materials, including surface morphology and dicing depth, as well as the chipping, microcrack, debris, and residual widths. The results revealed a relationship between the dicing quality and processing parameters that could serve as a reference for microcutting multilayer stack materials on silicon wafers in on-line production processes.

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