Abstract
Multilayer epitaxial growth (n+/p+/p-/n-) of 4H-SiC including double P-type epilayers was performed in the horizontal low-pressure hot-wall CVD(LP-HW-CVD). With the measurements of secondary ion mass spectroscopy (SIMS), atomic force microscope (AFM), Raman scattering and optical microscope, the doping concentration, surface morphology and crystalline quality of the epitaxial film were characterized. 4H-SiC BJTs with double base were fabricated on the epitaxial wafer. I-V characteristics of the device are presented.
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