Homoepitaxial growth and MOS structures of 4H-SiC on off-oriented n-type [0001] Si-faces

Guoshung Sun Guoshung Sun,Yongxing Zhang Yongxing Zhang,Jin Ning Jin Ning,Wanshun Zhao Wanshun Zhao,Lei Wang Lei Wang,Xin Gao Xin Gao,Jinmin Li Jinmin Li,Yiping Zeng Yiping Zeng

doi:10.1109/icsict.2004.1435318

Homoepitaxial growth and MOS structures of 4H-SiC on off-oriented n-type [0001] Si-faces

Guoshung Sun Guoshung Sun, Yongxing Zhang Yongxing Zhang + Show 6 more

https://doi.org/10.1109/icsict.2004.1435318

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Publication Date: Oct 18, 2004

Affiliation: Institute of Semiconductors

#Homoepitaxial Growth Of 4H-SiC #4H-SiC MOS Structures + Show 8 more

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Abstract

Homoepitaxial growth of 4H-SiC on off-oriented n-type Si-face (0001) substrates was performed in a home-made hot-wall low-pressure chemical vapor deposition (LPCVD) reactor with SiH/sub 4/ and C/sub 2/H/sub 4/ at temperature of 1500 C and pressure of 20 torr. The surface morphology and intentional in-situ NH/sub 3/ doping in 4H-SiC epilayers were investigated by using atomic force microscopy (AFM) and secondary ion mass spectroscopy (SIMS). Thermal oxidization of 4H-SiC homoepitaxial layers was conducted in a dry O/sub 2/ and H/sub 2/ atmosphere at a temperature of 1150 C. The oxide was investigated by employing X-ray photoelectron spectroscopy (XPS). 4H-SiC MOS structures were obtained and their C-V characteristics are presented.

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