Abstract

SnO2 stands as a prominently employed material as electron transport layer (ETL) for perovskite solar cells (PSCs). Nevertheless, SnO2 films prepared at low temperatures are accompanied by defects that will influent the transport of carriers at the interface, misalignment of energy levels, and the quality of thin perovskite film formation. Here, we introduce 4-aminobenzoic acid ethyl ester (4-AN), characterized by its carbonyl (CO) and amino (-NH2) groups, as a synergistic defect passivation agent on the surfaces of SnO2 and perovskite films. This approach aims to enhance the electron transport properties of SnO2. By optimizing the energy alignment between SnO2 and perovskite, 4-AN facilitates more efficient extraction of interfacial carriers, while also promoting the crystalline quality of perovskite films and suppressing carrier recombination at the interface. The long alkyl chains at the end play an important role in relieving the interfacial contact and help to enhance the SnO2/perovskite interfacial connection. Compared with pristine SnO2, the PSCs based on 4-AN modified SnO2 obtained an optimal efficiency of 21.83 %, while the devices maintained 90 % and 83 % of their initial PCE after storage for 1000 h in an N2 environment and humidity of 30–50 %. This work provides valid insights for the development of novel interface modification materials.

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