Multifunctional Logic‐in‐Memory Cell Based on Wafer‐Scale MoS2 Thin Films Prepared by Atomic Layer Deposition

Abstract

Large‐volume data storage and high‐efficiency data processing have been greatly urged by the fast development in artificial intelligence and internet of things involving novel semiconductor materials. Logic‐in‐memory has provided a promising route to address the processing/storage bottleneck in advanced computing systems. Herein, a logic‐in‐memory design based on wafer‐scale MoS2 floating‐gate field‐effect transistor (FGFET) arrays is demonstrated. Multiple logic states and over 10 V memory window are achieved through electrical gate modulation, which further enables in‐memory computing including logic functions of inverter and two‐input NAND gates. Such robust and stable logic‐in‐memory is ascribed to the highly uniform wafer‐scale MoS2 thin film prepared by atomic layer deposition (ALD)‐based synthesis and the reproducible electrical performance of the device arrays. As both memory and computing units are based on floating‐gate FET architecture with area efficiency, the proposed logic‐in‐memory cell can accomplish multifunctional tasks with fewer transistors, suggesting a potential application in high‐density and complex information processing and data storage systems.