Abstract
Abstract The fast-developing information technology has imposed an urgent need for effective solutions to overcome the limitations of integration density in chips with smaller size but higher performance. van der Waals heterojunctions built with two-dimensional (2D) semiconductors have been widely studied due to their 2D nature, and their unique electrical and photoelectronic properties are quite attractive in realizing multifunctional devices toward multitask applications. In this work, black phosphorus (BP)/MoS2 heterojunctions have been used to build electronic devices with various functionalities. A p-n diode is achieved based on the vertically stacked BP/MoS2 heterojunction exhibiting an ideal factor of 1.59, whereas a laterally stacked BP/MoS2 heterojunction is implemented to fabricate a photodetector that shows a photodetection responsivity of 2000 mA/W at a wavelength of 1300 nm. Furthermore, a ternary inverter has been realized using a BP field-effect transistor in-series with a lateral BP/MoS2 heterojunction. Such results have unambiguously demonstrated the superiority of BP/MoS2 heterojunction in realizing multiple functionalities and have offered a new pathway for the design and engineering of future circuitry and device integration based on novel 2D semiconductors.
Highlights
Two-dimensional (2D) layered materials, such as graphene, transition metal dichalcogenides (TMDCs), black phosphorus (BP), and hexagonal boron nitride (h-BN), offer a unique opportunity for building heterojunction devices due to the absence of dangling bonds on the surface and the weak van der Waals interactions between individual layers [1,2,3,4,5,6,7]
A ternary inverter has been realized using a BP field-effect transistor in-series with a lateral BP/MoS2 heterojunction. Such results have unambiguously demonstrated the superiority of BP/MoS2 heterojunction in realizing multiple functionalities and have offered a new pathway for the design and engineering of future circuitry and device integration based on novel 2D semiconductors
The lack of dangling bonds on the 2D material surface can lead to unexpected interface issues in specific structures such as TMDC/dielectric, functional devices can be achieved based on 2D material heterojunctions without the restraint of lattice mismatch and the need for a complex fabrication process [8]
Summary
Two-dimensional (2D) layered materials, such as graphene, transition metal dichalcogenides (TMDCs), black phosphorus (BP), and hexagonal boron nitride (h-BN), offer a unique opportunity for building heterojunction devices due to the absence of dangling bonds on the surface and the weak van der Waals (vdW) interactions between individual layers [1,2,3,4,5,6,7]. Wu et al leveraged the band-structure alignment properties of narrow-bandgap BP and large-bandgap MoS2 to realize vertical heterostructures with an ultrahigh rectifying ratio approaching and on-off ratio up to [2]. They have further designed and fabricated tunable multivalve inverters based on MoS2/BP heterojunctions [2]. Ye et al demonstrated a photodetector with visible to near-IR detection range based on the heterojunction fabricated by vdW assembly with few-layer BP and few-layer MoS2 [13]. We demonstrate an MoS2/BP heterojunction-based MVL device with the structure of ternary inverter
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