Abstract

The aluminium substituted bismuth based manganates with nominal composition BiMn1−xAlxO3 (x=0.0, 0.2, 0.4, 0.6 and 0.8) were prepared by the simple microemulsion method. The alteration in their structural, electrical and dielectric parameters due to Al substitution has been investigated. The X-ray diffraction analysis (XRD) confirms the formation of single phase orthorhombic with crystallite size ranges from 32 to 52nm. The morphological features and particle size were determined by using scanning electron microscopy (SEM). The dc electrical resistivity increased from 6×108 to 8×109Ωcm with the increase in substituent concentration. The dielectric constant, dielectric loss tangent and dielectric loss factor decreased with the increase in frequency. The increase in electrical resistivity makes the synthesized materials paramount over other materials and can be useful for technological applications in microwave devices.

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