Abstract
A multibarrier heterostructure GaAs/AlAs current switching diode has been proposed and investigated by Monte Carlo particle simulations. The switching phenomenon is based on electron tunneling and thermoemission from the GaAs wells to the AlAs barriers, electron drift across the thin AlAs barriers followed by a subsequent impact ionization in the undoped GaAs layers. The calculated switching voltage is close to 100 V for the diode involving four AlAs barriers at 300 K lattice temperature. The estimated switching time is in the order of 10 ps.
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