Multiband spectral response inspired by ultra-high responsive thermally stable and self-powered Sb2Se3/GaN heterojunction based photodetector

Abstract

Hetero-structuring of dissimilar materials provides an exciting pathway to achieve unique electrical and optical properties based on application demand. A combination of Sb2Se3 and GaN is a potential candidate for optoelectronic applications owing to the notable carrier mobilities and absorption coefficient. The thermal stability, low optical signal detection capabilities, and broad range spectral response of Sb2Se3/GaN heterostructure self-powered photodetector are assessed. A stable Sb2Se3/GaN heterostructure-based two-terminal device with excellent photoresponsivity of 1210 mAW−1 (self-power) and 2.3 × 106 mAW−1 (photoconductive @ 12V) with extremely low optical signal detection capability (650 nW) is designed. The devices can detect optical radiation across a broad spectrum from Deep Ultraviolet (250 nm) to Short Wave Infrared (1250 nm). Additionally, the assessment of the device revealed a distinct high-temperature resilience limit that allowed it to work as a thermally stable broadband photodetector. The heterostructure-based optical device demonstrates ultrahigh responsivities of 844 mAW−1 and 1.2 × 106 mAW−1 at 250 °C in the photovoltaic (0V) and photoconductive (12V) modes, respectively. The Sb2Se3/GaN heterostructure-based detector provides an excellent perspective for the next generation of thermally stable optoelectronic devices. The analysis better explains how heterostructure provides thermal stability and offers a viable approach for developing high-performance, self-powered, thermally stable broadband optical detectors.