Abstract
ABSTRACTDangling bond defects (DB) in silicon microcrystallines and clusters embedded in SiO2 have been studied by X- and Q-band electron paramagnetic resonance (EPR) spectroscopy. The EPR spectra due to the DB were remarkably depending on the grain size, which was controlled by annealing temperature. The microcrystalline containing film shows a broad and unsymmetrical EPR signal at g = 2.006 with the line width of 13 G in X-band spectra. The signal can be simulated by using the anisotropic g-values of Pb center. The Si cluster samples obtained from the annealing at less than 800°C give an asymmetric EPR spectra at about g = 2.004 with the line width of about 9 G in X-band. The EPR signal due to the E' center was also observed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
