Abstract
Gas source MBE is a promising technique for the growth of InGaAs-InP multi-quantum well layers, suitable for use as quantum confined Stark effect modulators. The application of gas source MBE to the growth of single and multi-quantum wells is described, and detailed analysis of interface perfection has been obtained by multiple crystal X-ray diffraction techniques and low temperature photoluminescence. Fabrication of a (4 × 4) modulator structure is described.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
