Multi‐quantum well Ga(AsBi)/GaAs laser diodes with more than 6% of bismuth

Abstract

Single- and multi-quantum well (QW) structures of Ga(AsBi)/GaAs with up to 10% Bi were grown by molecular beam epitaxy (MBE) at 300–330°C substrate temperature. The photoluminesce measurements of QW structures demonstrated room temperature emission up to wavelengths of ∼1.43 μm. In the structures obtained using a combined growth approach – an active layer with three QWs with ∼6% Bi was grown by MBE, whereas (AlGa)As claddings were grown by the metal organic vapour phase epitaxy technique – room temperature lasing at 1060 nm was documented.