Abstract
In this paper, we present nickel oxide (NiO) thin film bipolar non-volatile resistive memory device with multi-level conduction prepared by solution route at room temperature. The fabricated device with structure Al/NiO/ITO exhibits excellent switching parameters, such as a stable resistance value in both ON and OFF states for over 10 000 s (retention) and 105 switching cycles of memory operation (endurance). Stable multi-level conductance states are observed in the memory device, which could be exploited for a multilevel-cell programming scheme. The switching mechanism in the resistive memory device is discussed based on the formation/dissolution of conductive filaments.
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