Abstract
Design of Experiment (DoE) studies were employed to study optimized process conditions for the use of ozonated water (DIO3) in photoresist stripping processes. Optimized processes for the DIO3-based removal of a variety of positive and negative photoresist formulations were developed. Photoresist strip rates approaching 500 nm/min for simple resist formulations such as AZ 9260 and 200 nm/min for more challenging photoresists were observed. OPEX limits were imposed on the optimized processes and the best DIO3 photoresist strip processes with the lowest OPEX were determined.
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