Abstract
Over the last years singulation of thin semiconductor wafers with (ultra) low-κ top layer has become a challenge in the production process of integrated circuits. The traditional blade dicing process is encountering serious yield issues. These issues can be addressed by applying a laser grooving process prior to the blade dicing, which is the process of reference nowadays. However, as the wafers are becoming thinner this process flow is not providing the yield and productivity required. In this article the unique ASMPT multi beam technology is presented which addresses both concerns and enables a high productivity laser dicing process with a limited heat affected zone and sufficient die strength.
Published Version
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