Abstract
Thin FeAlN and FeTaN films were deposited by RF magnetron sputtering in an external magnetic field with (i) in situ crystal growth and (ii) ex situ controlled thermal crystallization of amorphous deposit, respectively, and their microstructures were studied using Mossbauer spectroscopy. The films obtained by the two methods possess different uniaxial magnetic anisotropy, which is related to the different microstructures of FeAlN and FeTaN systems and the opposite signs of stresses in the crystal lattices: expansion in FeAlN versus contraction in FeTaN.
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