Abstract

The microstructure, magnetic properties, and uniaxial magnetic anisotropy (MA) of FeMN thin films with M = Al and Ta have been studied. The films were prepared by rf sputtering in an applied magnetic field and synthesized either in situ (deposition accompanied by crystallization) or by annealing of amorphous alloys (temperature-induced crystallization). The experiments showed that the FeAlN and FeTaN films differ in the soft magnetic characteristics and origin of uniaxial MA. The cause of the differences was found to be due to the different microstructure and opposite (in sign) strains of the crystal lattices of the FeAlN and FeTaN films that are induced by Ta and Al ions.

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