Abstract
129mTe-atoms were implanted in AlxGa1−xAs-samples (withx varying from 0 to 1) with a dose of 2×1013 atoms/cm2. After rapid thermal annealing to 900°C, a variation in the Mossbauer spectra as a function ofx is observed. Forx between 0.2 and 0.7, a component with a large electric field gradient is dominant in the spectra, while for the other values ofx a single line dominates. The presence of the component with a large electric field gradient coincides with the presence of the so-called “DX-center”.
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