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Abstract
Fe diffusion and segregation process is studied in mc-Si crystals by “Mossbauer spectroscopic microscope (MSM)”, which enables us to measure the Fe diffusion profiles separately for different Fe chemical states in mc-Si with a spatial resolution of several micrometres. This new method opens a possibility to investigate a diffusion process strongly influenced by the interactions and the correlations between Fe impurities and lattice defects such as dislocations, grain boundaries, and residual stresses in different grains of materials.
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