Year-end Sale % OFF 
Abstract
This paper presents the results of an experiment designed to understand the effect of manufacturing-induced residual stress on photoluminescence (PL) in multi-crystalline silicon (mc-Si) wafers used for photovoltaic applications. The experiment relies on the use of near-infrared birefringence polariscopy and polarized micro-Raman spectroscopy to measure casting-induced residual stress present in mc-Si wafers. High temperature annealing was used to relieve the residual stress in the mc-Si wafers, and photoluminescence was used to evaluate the electrical performance to provide a correlation of residual stress to electrical activity. High temperature annealing produced a drastic improvement in photoluminescence. A decrease in the number of points of highest maximum shear stress correlated with an increase in photoluminescence. Additionally, a direct correlation was found between higher tensile residual stress and increased PL.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
