Abstract
We summarize our recent progress in Metal organic vapor phase epitaxy (MOVPE) van der Waals epitaxy of wafer-scale 2D layered hexagonal boron nitride (h-BN) on sapphire and subsequently grown III-N materials. This one step growth process allows for mechanical transfer of GaN-based devices from h-BN on sapphire to various supports. We first review the growth of h-BN on unpatterned and patterned sapphire templates. Second, we describe h-BN growth on dielectric pre-patterned sapphire templates, which enables dicing-free GaN-based device structures’ pick-and-place heterogenous integration of III-N devices. Third, we review the growth of self-assembled 1D GaN-based nanowire light emitting diode (LED) structures on layered 2D h-BN for mechanical transfer of nanowire LEDs. Together, these results illustrate the potential of wafer-scale van der Waals h-BN MOVPE to enhance the III-N device functionality and to improve III-N processing technology.
Highlights
Of the hexagonal boron nitride (h-BN) samples above 3 nm thick [Figs. 1(b)–1(d), right panels]
The extracted maximum depths of the pits are less than 1 nm, which are much lower than the total thickness of the h-BN layer, confirming that the h-BN layer is continuous on a sapphire substrate
The local decohesion could be caused by the weaker van der Waals forces between h-BN and the substrate in this area due to the direct growth on the sapphire substrate without any 3D bonded nucleation/buffer layers
Summary
Of the h-BN samples above 3 nm thick [Figs. 1(b)–1(d), right panels]. These pleats are characteristics of 2D materials and are important in determining the quality of the grown material.[16,19–24] We observe that the rms roughness values increase linearly from 0.2 to 3 nm with h-BN thickness. Different high-quality GaN-based device structures, such as InGaN and AlGaN light emitting diodes (LEDs) and high electron mobility transistors (HEMTs), were grown on h-BN, and the transfer to arbitrary substrates has been demonstrated.[18,38,39] GaN on BN was structurally similar to GaN on graphene reported elsewhere,[15] and the total threading dislocation density was around
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