Abstract
AbstractMOVPE growth of InN on sapphire substrate is reviewed focusing on the critical growth parameters. Based on our in situ spectroscopic ellipsometry results obtained during growth and the results found in the literature we suggest a strategy for successful growth of high quality InN layers. This includes nitridation of the substrate, growth parameters and suppression of layer peeling off. We find that the optimal temperature for the nitridation of the sapphire is around 1050 °C and the optimal growth temperature is always very close to the highest possible temperature which is determined by the thermal decomposition of the InN layer. The smallest accessible V/III ratio, before Indium droplets formation occurs, lies between 5000 and 10000 depending on the growth parameters. With the procedure we suggest here the growth temperature can be increased up to 580 °C with changes of the respective V/III ratio limits resulting in an improvement of the InN quality. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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