MOVPE growth of HgCdTe for high performance 3–5 µm photodiodes operating at 100–180K

Abstract

New results are reported on the growth of high performance medium wavelength infrared (3–5 µm) (MWIR) HgCdTe photodiodes in the three-layer P-n-N configuration. The detector structures were grown in situ by metalorganic vapor phase epitaxy (MOVPE) on (211)B oriented CdZnTe substrates. The mobilities of the single n-type layers with x-values of ∼0.30 are in the range of (3–4.5)×104 cm2/V-s at 80K. The lifetimes on unpassivated films range from 1–5 and 4–10 µs at 80 and 180K, respectively, which are within a factor of two or less of the lifetimes calculated for Auger-1 and radiative recombination. The P-n-N films were processed into variable-area backside-illuminated diagnostic arrays and tested for quantum efficiency, spectral response, RDA, I–V curves and 1/f noise in the 120–180K range. The internal one-dimensional quantum efficiencies are in the range of 85–100%. The optical collection lengths are typically ∼25 µm. I–V curves showed that diffusion current is the dominant junction current mechanism for temperatures ≥100K. R0A values are at the one-dimensional limit for n-side diffusion currents over the 100–180K range. 1/f noise was measured to be very low at 120K and is the same as that measured in similarly processed arrays from recent LPE grown P-on-N heterojunctions. The results demonstrate that MOVPE growth can be used for large area, high performance MWIR HgCdTe detector arrays operating in the 120–180K temperature range.