Abstract
AbstractWe report on the implementation of GaN‐based, blue light emitting diodes on 150 mm Si(001) substrates grown by metalorganic vapor phase epitaxy. The 2.8 µm thick samples are completely crack‐free and the optically active layers consist of fivefold InxGa1–xN/GaN multiple quantum wells. The homogeneity of the light emission across the whole sample is determined by photoluminescence wafer mapping exhibiting an averaged peak wavelength of 456 nm at room temperature and a standard deviation of less than 1%. A bright blue light emission is obtained by an electrical excitation with a turn‐on voltage of below 2.8 V. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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