Abstract

AbstractDue to large exciton binding energy, ZnO/ZnMgO heterostructures are promising for modern optoelectronic devices in UV range. We report on the metal‐organic vapor phase epitaxy (MOVPE) growth of ZnO, ZnMgO layers and periodic ZnO/ZnMgO MQW structures at atmospheric pressure of hydrogen using diethylzinc (DEZ), bismethyl‐cyclopentadienil‐magnesium ((MeCp)2Mg) and tertiary‐butanol (t‐BuOH) as precursors. Wurtzite‐type layers and MQW structures were grown below 450°C on Al2O3(0001) substrates. The growth rate is constant in the temperature interval from 170 to 430°C and decreases abruptly above 430°C as a result of decomposition in hydrogen. X‐ray measurement confirms the wurtzite structure of ZnMgO films with the Mg content of up to 35%. The as‐grown films show good optical quality and near band edge emission in the photoluminescence (PL) and cathodoluminescence (CL). Periodic ZnO/ZnMgO MQW structures with strong ZnO QWs emission at room temperature were grown. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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