Abstract
AbstractThe self‐assembled InAsN quantum dots (QDs) were grown on the GaAs (001) substrates by MOVPE using 1,1‐dimethylhydrazine (DMHy) as the N precursor, and their photoluminescence (PL) properties were investigated. The N incorporation leads to a decrease in the QDs size for an equivalent amount of source supply due to the increase in the wetting layer thickness. It also leads to an increase in the QDs density which is interpreted by the reduced surface migration length. The PL from the electron ground state of the InAsN QDs clearly shows the red‐shift to 1159 nm by the N incorporation, indicating that the effect of the huge bandgap bowing is dominant over the quantum size effect in the InAsN QDs. The thermal activation energy of the QDs derived from the temperature dependence of the integrated PL intensity decreases from 176 meV to 140 meV by the DMHy supply, which is explained by the lowering of the electron quantum state of the thicker wetting layer caused by the N incorporation. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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