Abstract
We investigated the morphological and optical properties of InAs quantum dots (QDs) grown by using periodic arsine interruption (PAI) and compared them with QDs grown conventionally. In the conventional growth, the formation of large islands was observed, which suppresses the nucleation and growth of QDs. Furthermore, the growth of capping layers was significantly degraded by these large islands. On the other hand, in the PAI growth, the formation of large islands was completely suppressed, resulting in the increase of the density and aspect ratio of QDs and the uniform growth of capping layers. As a result of photoluminescence (PL) measurements, we found that the emission efficiency was enhanced and the full-width-half-maximum was reduced to 32 meV. The temperature dependence of these optical properties also revealed the enhancement of the uniformity of QDs grown by the PAI method.
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