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https://doi.org/10.1007/s11664-997-0167-8
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Cite Journal: Journal of Electronic Materials |  Publication Date: Mar 1, 1997 |
 Citations: 8 |
We address combined utilization of temperature dependent reflectance, photo-luminescence, and Raman spectroscopy measurements to optimize the struc-tural and electronic properties of GaN epilayers deposited on sapphire. Last, we study residual strain fields in such epilayers.
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