MOVPE growth and n‐type conductivity control of high‐quality Si‐doped Al 0.5 Ga 0.5 N using epitaxial AlN as an underlying layer

Abstract

Conductivity control of 1-μm-thick Si-doped Al0.5Ga0.5N using an epitaxial AlN underlying layer wasrealized by introducing CH3SiH3 during low-pressure metalorganic vapor phase epitaxy. Cathodoluminescence measurements indicated that luminescence from a deep-level transition was caused by silicon doping. X-ray diffraction measurements showed that fluctuations of the tilt component of the c-axis increased with an increasing the silicon dopant flow rate. The electron concentration increased linearly with increasing the CH3SiH3 flow rate from 3.5 × 1017 cm−3 to 9.3 × 1017 cm−3. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)