Abstract
InGaAs quantum dots (QDs) with low areal density suitable for single-photon applications are fabricated on a GaAs substrate by MOVPE. AFM measurements used to investigate the dependency of QD density and size on the V/III ratio during growth reveal a low QD density of 3.2⋅107cm−2 for a high V/III ratio of 360. To allow for a targeted electrical excitation, the InGaAs QDs are embedded into a pin-LED structure containing an oxide aperture. Low temperature electroluminescence measurements show emission of a QD line at a wavelength of 1272.4 nm. Direct comparison of photoluminescence and electroluminescence spectra approve the electrical excitation of a single QD.
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