Mott–Schottky analysis of thin ZnO films

Abstract

Thin ZnO films, both native and doped with secondary metal ions, have been prepared by sputter deposition and also by casting from solutions containing a range of precursor salts. The conductivity and infrared reflectivity of these films are subsequently enhanced chemically following treatment in H2 gas at 400 °C or by cathodic electrochemical treatment in a neutral (pH=7) phosphate buffer solution. While Hall-type measurements usually are used to evaluate the electrical properties of such films, the present study investigated whether a conventional Mott–Schottky analysis could be used to monitor the change in concentration of free carriers in these films before and after chemical and electrochemical reduction. The Mott–Schottky approach would be particularly appropriate for electrochemically modified films since the measurements could be made in the same electrolyte used for the post-deposition electrochemical processing. Results of studies on sputtered pure ZnO films in ferricyanide solution were promising. Mott–Schottky plots were linear and gave free carrier concentrations typical for undoped semiconductors. Film thicknesses estimated from the Mott–Schottky data were also reasonably close to thicknesses calculated from reflectance measurements. Studies on solution-deposited films were less successful. Mott–Schottky plots were nonlinear, apparently due to film porosity. A combination of dc polarization and atomic force microscopy measurements confirmed this conclusion. The results suggest that Mott–Schottky analysis would be suitable for characterizing solution-deposited ZnO films only after extensive modeling was performed to incorporate the effects of film porosity on the characteristics of the space-charge region of the semiconductor.