Abstract
We present a state-of-the-art fabrication technology and physics-based model for molybdenum disulfide (MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ) field effect transistors (FETs) to realize large-scale circuits. Uniform and large area chemical vapor deposition (CVD) growth of monolayer MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> was achieved by using perylene-3,4,9, 10-tetracarboxylic acid tetrapotassium salt (PTAS) seeding. Then, a gate first process results in enhancement mode FETs and also reduces performance variation and enables better process control. In addition, a Verilog-A compact model precisely predicts the performance of the fabricated MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> FETs and eases the large-scale integrated design. By using this technology, a switched capacitor DC-DC converter is implemented, and the measurement of the converter shows good agreement with the simulations.
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