Abstract
The two-dimensional material molybdenum disulfide is an n-type semiconductor, so it can be directly used as a semiconductor in field effect transistors. Molybdenum disulfide has a direct band gap of 1.3–1.8 eV for high mobility, low power, and the high switching ratio field effect transistor has a great application space. Molybdenum disulfide has become the research focus of channel materials in silicon-based devices. In this paper, a few layers of molybdenum disulfide were prepared by chemical vapor deposition (CVD) and prepared into molybdenum disulfide field effect transistors by masking technique. The output characteristics were studied and tested to demonstrate the superior performance and application value of molybdenum disulfide in next-generation 3D imaging technology.
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