Abstract
A metal-oxide-semiconductor field effect transistor (MOSFET) has been used as a radiation monitor to map the profile of a variety of X-ray radiation microbeams. The present work studies the role of the topology of the MOSFET gate oxide when mapping radiation microbeams. The "edge-on" MOSFET has been introduced for microbeam mapping and the spatial resolution of the "edge-on" MOSFET is investigated. Comparison is made with other mapping techniques including, Gafchromic/sup TM/ film, radiographic film, ionization chamber. The results clearly demonstrate the superiority of the "edge-on" MOSFET when applied to mapping of narrow radiation beams. The spatial resolution of the "edge-on" MOSFET is estimated to be 1 /spl mu/m and appears to be limited by the width of the gate oxide thickness.
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