Abstract
TiO2 nanotube arrays (TNTs) are first prepared by anodization Ti foils in ethylene glycol electrolyte. Then, MoSe2 deposites electrochemically on TNTs. The as-synthesized MoSe2/TiO2 composite has a much higher photocurrent density of 1.07 mA cm−2 at 0 V than pure TNTs of 0.38 mA cm−2, which suggests that the MoSe2/TiO2 composite film has optimum photoelectrocatalysis properties. The electron transport resistances of the MoSe2/TiO2 decreases to half of pure TiO2, at 295.6 ohm/cm2. Both photocurrent-time and Mott-Schottky plots indicate MoSe2 a p-type semiconductor characteristics. MoSe2/TiO2 composite can achieve a maximum 5 orders of magnitude enhancement in carrier density (4.650 × 1027 cm−3) than that of pure TiO2 arrays. It can be attributed to p-n heterojunction formed between MoSe2 and TiO2, and the composite can be potentially applied in photoelectrochemical, photocatalysis fields.
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