Abstract
With the advancement of the present research in the field of transistors, with the miniaturization of devices it has become a great challenge of achieving high carrier density and lower operational voltage in the conventional field effect transistors, where in the normal case we usually see low capacitance and dielectric breakdown of gate dielectrics. And hence, presently, the development of the electric double layer technology with high charge career accumulation at the channel/electrolyte interface has been successful to achieve this motto. And presently several other superior characteristics like- superconductivity, metal insulator transition and tunable thermoelectric behaviour have been observed both theoretically and experimentally.
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