Abstract
AbstractTransparent and flexible diodes could be useful for future transparent electronics. Here such diodes are discussed with electrical breakdown (EBR) comprises of W/ZnO/ITO structure on the polyethylene terephthalate substrates. The three‐layered structure shows rectifying characteristics with low breakdown voltage originated from the Schottky barrier at the W/ZnO (0.8 eV) and the ZnO/ITO (0.1 eV) interfaces. Mechanical endurance is retained after different bending strengths and the rectification ratio is showed stability for 104 cycles without any significant degradation. Steep slope transistors are designed by implementing such diodes in series with the conventional field effect transistors. Such diode plus transistor stack enables field effect transistors with steep subthreshold swing of < 5.2 mV dec−1 and an internal current amplification due to negative differential resistance induces across the Schottky diodes during the EBR. Also, one diode‐one resistor structure is successfully demonstrated by connecting the flexible diodes and resistive memory in series for applications in high density integrated non‐volatile memory applications.
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