MOS STUDY OF INTERFACE-STATE TIME CONSTANT DISPERSION

Abstract

The time constant dispersion of states at the Si–SiO2 interface measured by the MOS conductance technique in the depletion region is too broad to be explained by the continuum model alone. By assuming that built-in charges and charged interface states are randomly distributed over the plane of the interface, the resulting fluctuations of surface potential lead to a time constant dispersion which agrees with experiment. An explanation is also given of the single time constant observed at each bias in weak inversion for the continuum of states.